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Thermally assisted ion beam etching of polytetrafluoroethylene a new technique for high aspect ratio etching of MEMS

机译:聚四氟乙烯的热辅助离子束刻蚀是MEMS高深宽比刻蚀的新技术

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摘要

In micromechanics, the etching of high aspect ratio structures in polymers is a prime technology. Normally, oxygen-based reactive ion etching or the LIGA technique are used to achieve this goal. This paper reintroduces a different idea to create deep trenches at high etch speed: The ion beam etching of Teflon. Because of its extraordinary properties the etch selectivity with respect to most other materials is over 1000. A model is proposed to explain the high etch rate and selectivity. Generally, the etching ions are highly energetic and material from different sources is sputtered on top of the sample. The high selectivity, high anisotropy, and sputtering of material are thought to be responsible for the forming of micrograss during etching a sample. Ways are given to decrease or increase this grass. The high potential of this technique will be discussed and applications will be shown. Especially, the use of etched Teflon for direct moulding is believed to become the main use of this technique.
机译:在微力学中,蚀刻聚合物中高纵横比的结构是一项主要技术。通常,基于氧的反应性离子蚀刻或LIGA技术用于实现此目标。本文重新介绍了以高蚀刻速度创建深沟槽的另一种想法:铁氟龙的离子束蚀刻。由于其非凡的性能,相对于大多数其他材料的蚀刻选择性超过1000。提出了一个模型来解释高蚀刻速率和选择性。通常,蚀刻离子的能量很高,并且来自不同来源的材料会溅射到样品的顶部。材料的高选择性,高各向异性和溅射被认为是在蚀刻样品期间形成微草的原因。给出了减少或增加这种草的方法。将讨论该技术的高潜力并展示其应用。特别地,使用蚀刻的特氟隆进行直接模塑被认为已成为该技术的主要用途。

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